january 2002 ? 2002 fairchild semiconductor corporation fds8958a rev d1(w) fds8958a dual n & p-channel powertrench ? ? ? ? mosfet general description these dual n- and p-channel enhancement mode power field effect transistors are produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. these devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. features ? q1 : n-channel 7.0a, 30v r ds(on) = 0.028 ? @ v gs = 10v r ds(on) = 0.040 ? @ v gs = 4.5v ? q2 : p-channel -5a, -30v r ds(on) = 0.052 ? @ v gs = -10v r ds(on) = 0.080 ? @ v gs = -4.5v ? fast switching speed ? high power and handling capability in a widely used surface mount package s d s s so-8 d d d g d1 d1 d2 d2 s1 g1 s2 g2 pin 1 so-8 4 3 2 1 5 6 7 8 q1 q2 absolute maximum ratings t a = 25c unless otherwise noted symbol parameter q1 q2 units v dss drain-source voltage 30 30 v v gss gate-source voltage 20 20 v i d drain current - continuous (note 1a) 7 -5 a - pulsed 20 -20 p d power dissipation for dual operation 2 w power dissipation for single operation (note 1a) 1.6 (note 1b) 1 (note 1c) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w package marking and ordering information device marking device reel size tape width quantity fds8958a fds8958a 13? 12mm 2500 units fds8958a
fds8958a rev d1(w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a v gs = 0 v, i d = -250 a q1 q2 30 -30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c i d = -250 a, referenced to 25 c q1 q2 25 -22 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v v ds = -24 v, v gs = 0 v q1 q2 1 -1 a i gssf gate-body leakage, forward v gs = 20 v, v ds = 0 v all 100 na i gssr gate-body leakage, reverse v gs = -20 v, v ds = 0 v all -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a v ds = v gs , i d = -250 a q1 q2 1 -1 1.6 -1.7 3 -3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c i d = -250 a, referenced to 25 c q1 q2 -4.3 4 mv/ c v gs = 10 v, i d = 7 a v gs = 10 v, i d = 7 a, t j = 125 c v gs = 4.5 v, i d = 6 a q1 21 32 27 28 42 40 m ? r ds(on) static drain-source on-resistance v gs = -10 v, i d = -5 a v gs = -10 v, i d = -5 a, t j = 125 c v gs = -4.5 v, i d = -4 a q2 41 58 58 52 78 80 i d(on) on-state drain current v gs = 10 v, v ds = 5 v v gs = -10 v, v ds = -5 v q1 q2 20 -20 a g fs forward transconductance v ds = 5 v, i d = 7 a v ds = -5 v, i d =-5 a q1 q2 19 11 s dynamic characteristics c iss input capacitance q1 q2 789 690 pf c oss output capacitance q1 q2 173 306 pf c rss reverse transfer capacitance q1 v ds = 10 v, v gs = 0 v, f = 1.0 mhz q2 v ds = -10 v, v gs = 0 v, f = 1.0 mhz q1 q2 66 77 pf fds8958a
fds8958a rev d1(w) electrical characteristics (continued) t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units switching characteristics (note 2) t d(on) turn-on delay time q1 q2 2.2 6.7 4.4 13.4 ns t r turn-on rise time q1 q2 7.5 9.7 15 19.4 ns t d(off) turn-off delay time q1 q2 11.8 19.8 21.3 35.6 ns t f turn-off fall time q1 v dd = 10 v, i d = 1 a, v gs = 10v, r gen = 6 ? q2 v dd = -10 v, i d = -1 a, v gs = -10v, r gen = 6 ? q1 q2 3.7 12.3 7.4 22.2 ns q g total gate charge q1 q2 16 14 26 23 nc q gs gate-source charge q1 q2 2.5 2.2 nc q gd gate-drain charge q1 v ds = 15 v, i d = 7 a, v gs = 10 v q2 v ds = -15 v, i d = -5 a,v gs = -10 v q1 q2 2.1 1.9 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current q1 q2 1.3 -1.3 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.3 a (note 2) v gs = 0 v, i s = -1.3 a (note 2) q1 q2 0.74 -0.76 1.2 -1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 78/w when mounted on a 0.5 in 2 pad of 2 oz copper b) 125/w when mounted on a .02 in 2 pad of 2 oz copper c) 135/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fds8958a
fds8958a rev d1(w) typical characteristics: q1 0 10 20 30 012345 v ds , drain-source voltage (v) i d , drain current (a) 4.0v 3.5v 3.0v 2.5v v gs = 10v 5.0v 7.0v 4.5v 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 6 12 18 24 30 i d , drain current (a) v gs = 3.0v 5.0v 7.0v 10v 4.0v 3.5v 4.5v 6.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.4 0.7 1.0 1.3 1.6 1.9 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) i d = 7a v gs = 10v 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 246810 v gs , gate to source voltage (v) i d = 7a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 25 30 12345 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 10v 0.001 0.01 0.1 1 10 100 00.20.40.60.811.21.4 v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds8958a
fds8958a rev d1(w) typical characteristics: q1 0 2 4 6 8 10 0 4 8 12 16 q g , gate charge (nc) v gs , gate-source voltage (v) i d =7a v ds = 5v 15v 10v 0 300 600 900 1200 0.0 5.0 10.0 15.0 20.0 v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) dc 10s 1s 100ms 100 ja = 135 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) single pulse r ja = 135c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. fds8958a
fds8958a rev d1(w) typical characteristics: q2 0 5 10 15 20 25 30 012345 -v ds , drain to source voltage (v) v gs = -10.0v -5.0v -3.0v - 7.0v -4.0v - 6.0v -3.5v 0.5 1 1.5 2 2.5 0 6 12 18 24 30 -i d , drain current (a) v gs = -3.5v -4.5v -5.0v -7.0v -10.0v -4.0v -6.0v figure 11. on-region characteristics. figure 12. on-resistance variation with drain current and gate voltage. 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) i d = -5a v gs = -10v 0 0.05 0.1 0.15 0.2 246810 -v gs , gate to source voltage (v) i d = -5a t a = 125 o c t a = 25 o c figure 13. on-resistance variation with temperature. figure 14. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 25 30 1.5 2.5 3.5 4.5 5.5 -v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = -10v 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , body diode forward voltage (v) v gs = 0v t a = 125 o c 25 o c -55 o c figure 15. transfer characteristics. figure 16. body diode forward voltage variation with source current and temperature. fds8958a
fds8958a rev d1(w) typical characteristics: q2 0 2 4 6 8 10 0481216 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -5.3a v ds = -5v -10v -15v 0 200 400 600 800 1000 0 5 10 15 20 -v ds , drain to source voltage (v) c iss c oss c rss f = 1 mhz v gs = 0 v figure 17. gate charge characteristics. figure 18. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) dc 10s 1s 100ms 100 ja = 135 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t 1 , time (sec) single pulse r ja = 135c/w t a = 25c figure 19. maximum safe operating area. figure 20. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 135 o c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p (p k ) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 21. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fds8958a
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